Contamination Handling for Semiconductor Apparatus

ABSTRACT

The present disclosure describes a lithography apparatus comprising a photoresist coating unit configured to perform one or more coating processes on a substrate. The lithography apparatus further comprises a detection unit configured to determine a contamination level of a contaminant from the one or more coating processes adheres on a sidewall of the lithography apparatus. The lithography apparatus further comprises a controller unit configured to adjust one or more operations of the lithography apparatus based on a comparison between the contamination level and a baseline cleanliness requirement of the lithography apparatus.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. Non-Provisional patentapplication Ser. No. 17/226,904, titled “Contamination Handling forSemiconductor Apparatus” and filed on Apr. 9, 2021, which is acontinuation of U.S. Non-Provisional patent application Ser. No.16/456,103, titled “Contamination Handling for Semiconductor Apparatus”and filed on Jun. 28, 2019, which claims the benefit of U.S. ProvisionalPatent Application No. 62/737,677, titled “Design Cup Wash TriggerTiming By Sensor” and filed on Sep. 27, 2018, the disclosures of whichare incorporated by references herein in their entireties.

BACKGROUND

With advances in semiconductor technology, there has been increasingdemand for high yield and throughput of the lithography process formanufacturing semiconductor devices. To meet these demands, it iscrucial to prevent lithography apparatus failures to ensure a reliablelithography process.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of this disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the common practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 illustrates a plan view of a lithography apparatus, according tosome embodiments.

FIG. 2 illustrates a chart for determining a contamination level in alithography apparatus, according to some embodiments.

FIG. 3 illustrates a method for operating a lithography apparatus,according to some embodiments.

FIG. 4 illustrates a method for operating a lithography apparatus,according to some embodiments.

FIG. 5 illustrates a computer system for implanting various embodimentsof the present disclosure, according to some embodiments.

Illustrative embodiments will now be described with reference to theaccompanying drawings. In the drawings, like reference numeralsgenerally indicate identical, functionally similar, and/or structurallysimilar elements.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature on or over a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Asused herein, the formation of a first feature on a second feature meansthe first feature is formed in direct contact with the second feature.In addition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition does not in itselfdictate a relationship between the various embodiments and/orconfigurations discussed.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper,” and the like may be used herein for ease of description todescribe one element or feature's relationship to another element(s) orfeature(s) as illustrated in the figures. The spatially relative termsare intended to encompass different orientations of the device in use oroperation in addition to the orientation depicted in the figures. Theapparatus may be otherwise oriented (rotated 90 degrees or at otherorientations) and the spatially relative descriptors used herein maylikewise be interpreted accordingly.

The coating module can further include a drain cup structure to capturea portion of the dispatched photoresist sprayed from the semiconductorwafer during the spinning of the semiconductor wafer. The photoresistcaptured by the drain cup structure can be further fluidly transferredto a drain. Nevertheless, since the photoresist can dry in an atmosphereenvironment, the captured photoresist can solidify, thus adhering to thedrain cup structure. A portion of the solidified photoresist can furtherclog an inlet of the ventilation or exhaust pump interconnected with thedrain and/or the drain cup structure. This can jeopardize theventilation and exhaustion capability provided by the ventilation orexhaust pump for reducing the suspended particles. As a result, thecoating module can additionally include a solvent dispenser configuredto dispense a solvent to decontaminate the drain cup structure atdesignated times. However, such regularly decontamination can eitherdelay a manufacturing schedule associated with the lithography apparatusor fail to timely clean the drain cup structure, thus impacting overallproductivity or yield, respectively, of the lithography process.

The present disclosure is directed to a lithography apparatus andmethods to handle contamination in the lithography apparatus. In someembodiments, the lithography apparatus can include a sensor, a flowmeter, and a pressure gauge to monitor a contamination level in thelithography apparatus. Data recorded by the sensor, the flow meter, orthe pressure gauge can be received by a computer system configured torun a procedure to decontaminate the lithography apparatus. A benefit ofthe present disclosure is to provide a mechanism to dynamicallydecontaminate the lithography apparatus, thus avoiding unnecessarymaintenance procedures and balancing requirements of yield andproductivity of semiconductor device manufacturing.

FIG. 1 illustrates a plan view of a lithography apparatus 100 configuredto conduct a lithography process on a substrate (e.g., a substrate 101),according to some embodiments. Lithography apparatus 100 can include aphotoresist coating module 106 configured to coat a coating material 102(e.g., a photoresist or any other fluid organic material) on thesubstrate (e.g., substrate 101) and an illumination module 160configured to condition a radiation beam for irradiating the substrate.Lithography apparatus 100 can also include a controller unit 170configured to communicate with photoresist coating module 106 andillumination module 160 via a communication mechanism 172. In someembodiments, lithography 100 can further include other modules notincluded in FIG. 1 , such as a projection module configured to directthe radiation beam to expose the substrate or a supporting structureconfigured to hold a photo mask, where each of the other modules can befurther configured to communicate with controller unit 170 viacommunication mechanism 172.

Photoresist coating module 106 can include a chuck 116 configured tohold substrate 101, a spindle 118 configured to provide a rotationmechanism for chuck 116, a circularly shaped drain cup structure 130enclosing and surrounding chuck 116, a detection module 140 disposed ata space 135 between drain cup structure 130 and chuck 116, one or moresolvent dispensers 132 disposed below chuck 116, and a photoresistfeeder 108 configured to dispatch coating material 102 onto one or moreareas of substrate 101. In some embodiments, photoresist coating module106 can have multiple photoresist feeders 108, where each photoresistfeeder 108 can be configured to dispatch different species of coatingmaterial 102. For illustration purposes, FIG. 1 includes selectedportions of photoresist coating module 106 and other components, such asrobotic arms and solvent banks, are not shown.

Substrate 101 can include a top surface 101A, where lithographyapparatus 100 can conduct lithography process on top surface 101A.Substrate 101 can be mounted on chuck 116 to receive coating material102. For example, substrate 101 can further include a bottom surface101B opposite to top surface 101A, where bottom surface 101B can be incontact with chuck 116, and top surface 101A can be configured toreceive coating material 102 from photoresist feeder 108. Chuck 116 canbe stationary or rotated by spindle 118 to provide a centrifugal forceto spread and distribute the dispatched coating material 102 acrosssubstrate 101's top surface. In some embodiments, a passage structure117 can be included in photoresist coating module 106 and embedded inchuck 116 and spindle 118, where a vacuum suction can be providedthrough passage structure 117 to secure substrate 101 on chuck 116.

Drain cup structure 130 can include one or more drain cups surroundingchuck 116 to capture coating material 102 sprayed from substrate 101.For example, drain cup structure 130 can include an outer drain cup 130Asurrounding chuck 116, where a portion of sidewalls 131A of outer draincup 130A can be disposed above a periphery of chuck 116 to capturecoating material 102 discharged from substrate 101's top surface. Aportion of the captured coating material 102 can be further fluidlydirected to an exhaust pathway 134 interconnected with outer drain cup130A, while an other portion of the captured coating material 102 candry and become solidified coating material 105 (herein referred as“residue 105”) stuck to sidewalls 131A. Drain cup structure 130 canfurther include an inner drain cup 130B surrounding chuck 116, whereinner drain cup 130B can be surrounded by outer drain cup 130A. Innerdrain cup 130B can include sidewalls 131B disposed below the peripheryof chuck 116 to capture coating material 102 discharged from substrate101's top surface. Similar to outer drain cup 130A, a portion of thecaptured coating material 102 can be fluidly direct to exhaust pathway134 interconnected with inner drain cup 130B while an other portion ofthe captured coating material 102 can become residue 105 adhered tosidewalls 131B.

In some embodiments, detection module 140 can be disposed at a space 135that can be defined as a space between outer drain cup 130A and chuck116. In some embodiments, detection module 140 can be disposed at aspace 135 that can be defined as a space between inner drain cup 130Band chuck 116. In some embodiments, detection module 140 can be disposedat a space 135 that can be defined as a space between outer drain cup130A and inner drain cup 130B.

Dispensers 132 can be configured to eject a solvent to remove residue105 adhered to the sidewalls of drain cup structure 130 (e.g., sidewalls131A-131B), where the solvent can be any suitable chemical, such asacetone or a photoresist thinner, to dissolve or etch residue 105. Forexample, solvent dispensers 132 can eject solvent 133 towards bottomsurface 101B of a spinning substrate 101, where the spinning substrate101 can provide a centrifugal force to spray solvent 133 towards draincup structure 130. Residue 105 adhered to sidewalls 131A-131B can thenbe dissolved by solvent 133 and fluidly directed to exhaust pathway 134.

Photoresist coating module 106 can further include a pumping unit 136with an inlet region 137 interconnected with exhaust pathway 134.Pumping unit 136 can be a ventilation pump to ventilate or vent anatmosphere inside photoresist coating module 106 for reducing suspendedparticles in photoresist coating module 106. Pumping unit 136 can alsobe configured to provide a pressure difference for aiding the dischargedcoating material 102 flowing from drain cup structure 130 towardsexhaust pathway 134. In some embodiments, pumping unit 136 can furtherinclude a pressure gauge or a flow meter (both not shown in FIG. 1 ) tomonitor a vacuum signature associated with a clogging condition of inletregion 137. For example, residue 105 can clog inlet region 137 andinhibit air flowing from drain cup structure 130 to exhaust pathway 134,thus causing a respective pressure drop or flow rate drop at inletregion 137. In some embodiments, the pressure gauge or the flow meter ofpumping unit 136 can be communicated with controller unit 170.

Detection module 140 can be configured to monitor drain cup structure130 and communicate with controller unit 170. For example, detectionmodule 140 can be configured to monitor sidewalls 131A-131B while chuck116 is stationary or a lithography process is conducted by lithographyapparatus 100. Detection module 140 can include an image sensor (e.g., acharge coupled device (CCD) sensor) configured to record visualsignatures of drain cup structure 130 (e.g., sidewalls 131A-131B), wherethe visual signature can include images or videos of residue 105 adheredto drain cup structure 130. The images/videos can have any suitableformat, such as a suitable resolution (e.g., 640 pixels×480 pixels),greyscale (e.g., 256 combinations of shades of gray), chrominance, orframe rate (e.g., 30 pictures per second). Data associated with thevisual signatures can be sent to controller unit 170 or a computersystem (not shown in FIG. 1 ) for determining a contaminationcharacteristic associated with residue 105 adhered to drain cupstructure 130 (e.g., at sidewalls 131A-131B).

In some embodiments, detection module 140 can also include an opticalmodule (e.g., a fiber sensor) configured to transmit and receive one ormore optical signals associated with measuring a surface coverage or athickness of residue 105 on drain cup structure 130. For example,detection module 140 can be configured to transmit an optical signaltowards sidewalls 131A-131B, and receive another optical signalreflected, deflected, or refracted from sidewalls 131A-131B, where anintensity difference or a phase difference between the transmitted andreceived optical signal can be associated with the surface coverage ofthe thickness of residue 105 on drain cup structure 150. Optical dataassociated with such intensity/phase difference can be sent tocontroller unit 170 or a computer system (not shown in FIG. 1 ) fordetermining the contamination characteristic at drain cup structure 130(e.g., at sidewalls 131A-131B). In some embodiments, the optical modulecan include a fiber sensor or any other suitable optical sensor.

In some embodiments, detection module 140 can also include an acousticmodule configured to transmit and receive one or more acoustic signalsassociated with a surface coverage or a thickness of residue 105 ondrain cup structure 130. Similar to the previous discussion of theembodiments of the optical module, acoustic data associated with anintensity/phase difference between the transmitted/received acousticsignals can be sent to controller unit 170 or a computer system (notshown in FIG. 1 ) for determining the contamination characteristic atdrain cup structure 130. In some embodiments, the acoustic module caninclude an ultrasonic sensor or any other suitable sensor.

Photoresist feeder 108 can include a photoresist cartridge 122configured to output coating material 102, a fluid conduit 109 fluidlyconnected to photoresist cartridge 122, and a fluid leakage handlingdevice 110 configured to capture and detect a fluid leakage of fluidconduit 109. Photoresist feeder 108 can be mobile in photoresist coatingmodule 106, such that photoresist feeder 108 can be moved between aspace above chuck 116 and another location in photoresist coating module106. For example, photoresist feeder 108 can be grabbed by a robotic arm(not shown in FIG. 1 ) of photoresist coating module 106 and be movedbetween chuck 116 and a solvent bank (not shown in FIG. 1 ) ofphotoresist coating module 106, where the solvent bank can be configuredto preserve a cleanliness of photoresist cartridge 122. Photoresistfeeder 108 can also be positioned above multiple areas of chuck 116 todispatch coating material 102 on multiple areas of substrate 101.

Photoresist cartridge 122 can include a photoresist dispensing nozzle115 configured to dispense coating material 102 and a holder 112configured to house photoresist dispensing nozzle 115 and fluid conduit109. In some embodiments, photoresist cartridge 122 can further includea connector 111 to secure a connection between fluid conduit 109 andholder 112. Photoresist dispensing nozzle 115 can be a tapered orstraight-bore pipe structure (not shown in FIG. 1 ) configured toreceive coating material 102 from fluid conduit 109 and dispense coatingmaterial 102 to substrate 101 secured on chuck 116. In some embodiments,photoresist dispensing nozzle 115 can further include a chamber (notshown in FIG. 1 ) interconnected with the tapered or straight-bore pipestructure, where an enclosure of the chamber can be configured to storecoating material 102 provided by fluid conduit 109. Holder 112 caninclude a handle structure (not shown in FIG. 1 ) for a robotic arm ofphotoresist coating module 106 to carry photoresist cartridge 122. Forexample, the robotic arm can grab holder 112's handle structure to moveholder 112, together with photoresist dispensing nozzle 115 and fluidconduit 109, between multiple locations in photoresist coating module106.

Fluid conduit 109 can include a photoresist pipe 113 configured totransport coating material 102 to photoresist cartridge 122. An end ofphotoresist pipe 113 can be fluidly connected to photoresist dispensingnozzle 115. Another end of photoresist pipe 113 can be fluidly connectedto a chemical storage container (not shown in FIG. 1 ) that storescoating material 102. In some embodiments, a pump (not shown in FIG. 1 )can be fluidly connected between photoresist pipe 113 and the chemicalstorage container, where the pump can be configured to introduce coatingmaterial 102 from the chemical storage container to photoresistcartridge 122. Fluid conduit 109 can further include a circulation pipe114 surrounding and contacting photoresist pipe 113, where circulationpipe 114 can be configured to circulate a coolant (e.g., water) tostabilize or regulate a temperature of coating material 102 inphotoresist pipe 113. Both photoresist pipe 113 and circulation pipe 114can be made of a soft material (e.g., a plastic material) that isbendable, extendable, and retractable. As a result, both photoresistpipe 113 and circulation pipe 114 can include one or morebending/stretching segments 103, where the one or morebending/stretching segments 103 can allow fluid conduit 109 andphotoresist cartridge 122 to be displaced between multiple locationswithin photoresist coating module 106. In some embodiments,bending/stretching segments 103 can have one or more areas that leakscoolant from circulation pipe 114, thus contaminating substrate 101.

Fluid conduit 109 can further include a flow meter 120 configured tomeasure fluid movement in fluid conduit 109 and communicate withcontroller unit 170 to transmit data associated with the monitored fluidmovement. Flow meter 120 can be connected in series with fluid conduit109 such that one or more fluids in fluid conduit 109 can pass throughflow meter 120 to measure flow rate. For example, flow meter 120 can bea two-port device with a first port at a first side and a second port ata second side opposite to the first side. The first and second ports areconnected to photoresist pipe 113 to allow coating material 102 tofluidly pass through flow meter 120 to measure flow rate of coatingmaterial 102. In some embodiments, flow meter 120 can be anobstruction-type flow meter, a turbine-type flow meter, anelectromagnetic flow meter, a positive displacement-type flow meter, afluid dynamic-type flow meter, an ultrasonic-type flow meter, a massflow meter, or any other suitable type of flow meter. In someembodiments, flow meter 120 can be further configured to receive one ormore instructions from controller unit 170 to regulate fluid movement influid conduit 109.

Fluid leakage handling device 110 can include a container (not shown inFIG. 1 ) configured to capture a fluid leaked from fluid conduit 109(referred to herein as “fluid leakage”), such as coolant leaked fromcirculation pipe 114 or coating material 102 leaked from photoresistpipe 113. Fluid leakage handling device 110 can further include afluidic sensor (not shown in FIG. 1 ) configured to detect the fluidleakage, where the fluidic sensor can communicate with controller unit170 via communication mechanism 172. Fluid leakage handling device 110can be disposed above chuck 116. For example, fluid leakage handlingdevice 110 can be placed at or near an outer surface of fluid conduit109 or an outer surface of photoresist cartridge 122. In someembodiments, fluid leakage handling device 110 can be disposed betweenphotoresist cartridge 122 and chuck 116, where photoresist cartridge 122can dispense coating material 102 on substrate 101 through fluid leakagehandling device 110.

In some embodiments, lithography apparatus 100 can further includeanother fluid leakage module (not shown in FIG. 1 ) configured to detecta fluid leakage in lithography apparatus 100, where fluid leakagehandling device 110 can be configured to communicate with the otherfluid leakage module, and the other fluid leakage module can beconfigured to communicate with controller unit 170.

Controller unit 170 can include any suitable computer system (e.g.,workstation or portable electronic device) to store programs and datafor various operations of each modules of lithography apparatus 100, toinstruct lithography apparatus 100 to conduct the lithography process ona substrate. For example, controller unit 170 can be configured toinstruct photoresist coating module 106 to conduct the photoresistcoating process on substrate 101, including controlling a displacementof photoresist feeder 108 or a rotation of chuck 116. The differentfunctions of controller unit 170 should not be limited by theembodiments of the present disclosure. Communication mechanism 172 caninclude any suitable network connection between controller unit 170 andeach module of lithography apparatus 100. For example, communicationmechanism 172 can include a local area network (LAN) and/or a WiFinetwork. In some embodiments, controller unit 170 can transmit controlsignals through communication mechanism 172 to control the rotation ofchuck 116 or the displacement of photoresist feeder 108.

In some embodiments, controller unit 170 can be configured to perform acomputing procedure to analyze the visual signature data, the opticaldata, the acoustic data, the fluid movement data, or the vacuumsignature data to determine the contamination characteristic of draincup structure 130. The computer procedure can include one or moremathematical operations, a pattern recognition procedure, a big datamining procedure, or a machine learning procedure, such as a neuralnetwork algorithm or a regression algorithm, to analyze, classify, orcluster the visual signature/optical/acoustic/fluid movement/vacuumsignature data.

FIG. 2 illustrates a chart 200 to determine a contamination level atdrain cup structure 130 based on usages of one or more photoresistsconsumed by photoresist coating module 106, according to someembodiments. As shown in FIG. 2 , chart 200 indicates a photoresistcoating module 106 with three photoresist feeders 108, where each of thephotoresist feeders 108 can be associated with coating material 102having a respective usage and respective physical properties. Eventhough three photoresist feeders 108 are considered here, chart 200 canbe applied to a photoresist coating module 106 with one or morephotoresist feeders 108.

Each of the characteristics scores x₁-x₃ can be determined based on thephysical properties of the respective coating material 102, such as aviscosity, a density, or a surface tension. For example, eachcharacteristic score can be proportional to the respective coatingmaterial 102's viscosity. In some embodiments, each characteristic scorecan be a nominal thickness of a film produced by spin-coating therespective coating material 102 on a substrate, because such nominalthickness can be associated with the physical properties of therespective coating material 102. For example, a photoresist with higherviscosity can generate a thicker photoresist film compared to the onewith lower viscosity under a same coating recipe (e.g., spinning speed),thus having a higher characteristic score in chart 200.

Each of the coating material usages v₁-v₃ can be determined based on avolume of a respective coating material 102 outputted by the respectivephotoresist feeder 108. In some embodiments, each of the photoresistusages v₁-v₃ can be proportional to a flow rate of the respectivecoating material 102 fluidly transported in the respective photoresistfeeder 108, where such flow rate can be measured by flow meter 120 ofthe respective photoresist feeders 108. In some embodiments, each of thephotoresist usages v₁-v₃ can be a product of the flow rate and arespective dispensing time of the coating material 102 dispensed by therespective photoresist feeder 108, where such dispensing time can beprovided by controller unit 170 or the respective photoresist feeder108.

Each of the individual contamination levels can be associated with anamount of residue 105 contributed by the respective photoresist feeder108. For example, each of the individual contamination levels can beproportional to a usage of the respective coating materials (e.g., v₁).In some embodiments, each of the individual contamination can beproportional to a weighted usage of the respective coating material(e.g., x₁v₁). A contamination level associated with a residue 105adhered to sidewalls of drain cup structure 130 can therefore beproportional to a weighted sum of the coating material usages (e.g.,v₁-v₃) based on the characteristics scores (e.g., x₁-x₃). In otherwords, a coating material with high viscosity and/or high usage cancontribute a respective more amount of residue 105, thus contributing ahigher contamination level. Accordingly, as illustrated in chart 200,the contamination level contributed by each of the three photoresistfeeders 108 can be proportional to x₁v₁+x₂v₂+x₃v₃.

FIG. 3 is a method 300 for operating a lithography apparatus, accordingto some embodiments of the present disclosure. Operations shown inmethod 300 are not exhaustive; other operations can be performed as wellbefore, after, or between any of the illustrated operations. In someembodiments, operations of method 300 can be performed in a differentorder. Variations of method 300 are within the scope of the presentdisclosure.

Method 300 begins with operation 310, where a contaminationcharacteristic of the lithography apparatus is determined. Suchdetermination can be performed in parallel with an on-going lithographyprocess conducted by the lithography apparatus (e.g., lithographyapparatus's chuck is rotating.) In some embodiments, the determinationcan be performed while the lithography apparatus is idle (e.g.,lithography apparatus's chuck is stationary.)

The contamination characteristic can include a visual signature of oneor more coating materials adhered to the drain cup structure (referredto herein as “the contaminants at the drain cup structure”). Thedetermination of such contamination characteristic can includecollecting a visual signature (e.g., images or videos) of one or moreareas of the drain cup structure's sidewalls via an image sensor, wherethe visual signature can include information of color saturation, colorgradation, contrast, or brightness associated with the contaminants atthe drain cup structure. In some embodiments, the collection of thevisual signature is described above with respect to FIG. 1 .

In some embodiments, the contamination characteristic can include asurface coverage and/or a thickness of the contaminants at the drain cupstructure. The determination of such contamination characteristic caninclude emitting an optical/acoustic signal towards one or more areas ofthe drain cup structure and measuring a reflected or scatteredoptical/acoustic signal from the drain cup structure. Based on awavelength of the emitted or measured optical/acoustic signals, thesurface coverage and/or the thickness of the contaminants at the one ormore areas of the drain cup structure can be inferred by calculating anintensity difference or a phase difference between the emitted and themeasured optical/acoustic signals. The optical/acoustic emission, theoptical/acoustic measurement, and the calculation of intensity/phasedifference can be conducted by an optical/acoustic module of thelithography apparatus. In some embodiments, the calculation can beconducted by a computer system. In some embodiments, theoptical/acoustic emission, the optical/acoustic measurement, and thecalculation of intensity/phase difference are described above withrespect to FIG. 1 .

In some embodiments, the contamination characteristic can also includean amount of usage of each of the coating materials consumed by thelithography apparatus, where the determination of such contaminationcharacteristic can include measuring a flow rate of each of the coatingmaterials via one or more flow meters of the lithography apparatus andrecording a dispensing time of each of the coating materials. Since anamount of the contaminants at the drain cup structure can beproportional to a usage of each of the coating materials, thecontamination characteristic can therefore be calculated based on themeasured flow rate, dispensing time, and physical characteristic (e.g.,viscosity and/or density) of each of the coating material. In someembodiments, the flow rate measurement, the recording of the dispensingtime, and the calculation of the contamination characteristic aredescribed above with respect to FIGS. 1 and 2 .

In some embodiments, the contamination characteristic can furtherinclude a vacuum signature at an inlet region of a ventilation pump ofthe lithography apparatus, where the determination of such contaminationcharacteristic can further include monitoring a pressure or a gas flowat the inlet region of a ventilation pump. Since the contaminantsadhered to the drain cup structure can clog the inlet region, thepressure or the gas flow at the inlet region can change the contaminantsbuilds up. The vacuum signature can be monitored by a pressure gauge ora flow meter at the inlet region, where the pressure gauge or the flowmeter can be configured to communicate with a computer system. In someembodiments, the monitoring the vacuum signature is described above withrespect to FIG. 1 .

In operation 320, the contamination characteristic is compared to abaseline cleanliness requirement. The baseline cleanliness requirementcan be associated with a qualified ventilation or venting capability ofthe lithography apparatus. For example, the qualified ventilationcapability can ensure suspended particles are effectively suppressed inthe lithography apparatus, thus maintaining a yield requirement of thelithography process conducted by the lithography apparatus. The baselinecleanliness requirement can include a predefined visual signature of adrain cup structure of the lithography apparatus (e.g., an image of adrain cup structure without adhesion of coating materials), a predefinedupper limit of surface coverage and/or thickness of a residue adhered tothe drain cup structure, a predefined upper limit usage of coatingmaterials consumed by the lithography apparatus, and/or a predefinedvacuum signature (e.g., pressure or gas flow) at the inlet region. Thecomparison can include subtracting the baseline cleanliness requirementfrom the contamination characteristic. For example, the contaminationcharacteristic can be an image (e.g., a visual signature) collected fromone or more areas of the drain cup structure's sidewalls, where thecomparison can include pixel subtraction between the collected image andthe predefined image of the drain cup structure's sidewalls withoutcontamination. In some embodiments, the comparison can includesubtracting the determined surface coverage/thickness of thecontaminants at the drain cup structure from the predefined upper limitof surface coverage/thickness, subtracting the determined usages of eachcoating material from the predefined upper limit of usage, and/orsubtracting the determined pressure/gas flow at the inlet region of theventilation pump from the predefined upper limit of pressure/gas flow.In some embodiments, the comparison can be performed by a computersystem (e.g., the lithography apparatus's controller unit), such as thecomputer system described above with respect to FIGS. 1 and 2 .

In operation 330, a decontamination process for the drain cup structureis triggered based on the comparison in operation 320. Thedecontamination process can include dispensing a solvent towards thedrain cup structure to dissolve or etch the contaminants at the draincup structure. For example, the solvent can be dispensed for apredefined length of time to decontaminate the contaminants adhered tosidewalls of the drain cup structure. In some embodiments, the solventdispensing can continue until a contamination characteristic associatedwith the decontaminated drain cup structure meets the baselinecleanliness requirement. The triggering can also include issuing apreventive maintenance alert to apply solvent to the drain cupstructure's surfaces. In some embodiments, triggering of thedecontamination process is described above with respect to FIG. 1 .

FIG. 4 is a method 400 for operating a lithography apparatus, accordingto some embodiments of the present disclosure. Operations shown inmethod 400 are not exhaustive; other operations can be performed as wellbefore, after, or between any of the illustrated operations. In someembodiments, operations of method 400 can be performed in a differentorder. Variations of method 400 are within the scope of the presentdisclosure.

Method 400 begins with operation 410, where one or more coatingprocesses are conducted in the lithography apparatus. Each of the one ormore coating processes can include securing a substrate on a chuck ofthe lithography apparatus, dispensing a coating material on one or moreareas of the substrate's top surface, and spinning the substrate. Aftereach of the one or more coating processes, a portion of the respectivecoating material can be uniformly distributed on the respectivesubstrate's top surface, while another portion of the respective coatingmaterial (e.g., a residue) can remain in the lithography apparatus. Forexample, the residue can be sprayed onto a drain cup structure of thelithography apparatus, thus causing a contamination in the lithographyapparatus. In some embodiments, the one or more coating processes aredescribed above with respect to FIG. 1 .

In operation 420, a contamination level associated with the one or morecoating processes is determined. The contamination level can bedetermined by summing multiple individual contamination levelsassociated with each of the one or more coating processes, where each ofthe individual contamination levels can be associated with a usage ofthe respective coating material in each of the one or more coatingprocesses. In some embodiments, each individual contamination level canbe associated with physical properties (e.g., viscosity and/or density)of the respective coating material. For example, a coating material withhigher viscosity and/or heavier usage in a coating process can introducea higher contamination level in the lithography apparatus. Accordingly,the determination of the contamination level can include determining acoefficient of each of the coating materials based on the physicalproperties of each coating material and calculating a weighted sum basedon the coefficients and the usages of the coating materials in eachcoating process. In some embodiments, a usage of a coating material in acoating process can be determined by measuring a volume of the coatingmaterial consumed by the coating process, where the volume can befurther determined by measuring a flow rate and a dispensing time of thecoating material during the coating process. In some embodiments, ausage of a coating material can be determined by measuring a weight ofthe coating material consumed by the coating process, where the weightcan be determined based on the measured volume and the coatingmaterial's density. In some embodiments, the determination of thecontamination level is described above with respect to FIG. 2 .

In operation 430, one or more operations of the lithography apparatusare adjusted based on a comparison between the contamination level and apredefined threshold. In response to the contamination level beinghigher than the predefined threshold, the adjustments can includeremoving contaminants from the drain cup structure and/or a ventilationconduit of the lithography apparatus. In some embodiments, the removalof the contaminants can include placing a substrate over the lithographyapparatus's chuck, dispensing a solvent on a back surface of thesubstrate, and spinning the substrate to provide a centrifugal force tospray the dispensed solvent to the drain cup structure and/or theventilation conduit. In some embodiments, the adjustment can includeaborting an on-going lithography process and/or a subsequent lithographyprocess. For example, in response to the contamination being higher thanthe predefined threshold, an on-going photoresist coating process maycontinue to meet a manufacturing schedule and a subsequent photoresistcoating processes can be aborted to avoid potential manufacturing yieldconcerns associated with the contamination. The adjustment can furtherinclude interlocking the operations of the lithography apparatus, suchas triggering a preventive maintenance alert to hand-wash thelithography apparatus's drain cup structure, prohibiting the use ofcoating material with high viscosity, and/or adjusting a manufacturingschedule of a semiconductor device using the lithography apparatus. Forexample, the adjustment can notify supply-chain management to prepare aninventory of a new solvent to further decontaminate the lithographyapparatus.

Further, after operation 430, the contamination level can be reset basedon the adjustment of one or more operations in operation 430. Forexample, the contamination level can be reset to zero if the dispensedsolvent completely dissolves the contaminants (e.g., the contaminantsare completely removed by operation 430.) In some embodiments, thecontamination level can be reset to a fraction of the originalcontamination level (e.g., the contaminants are partially removed byoperation 430.)

FIG. 5 is an illustration of an example computer system 500 in whichvarious embodiments of the present disclosure can be implemented,according to some embodiments. Computer system 500 can be used, forexample, in controller unit 170 of FIG. 1 . Computer system 500 can beany well-known computer capable of performing the functions andoperations described herein. For example, and without limitation,computer system 500 can be capable of processing and transmittingsignals. Computer system 500 can be used, for example, to execute one ormore operations of lithography apparatus 100, method 300, and/or method400.

Computer system 500 includes one or more processors (also called centralprocessing units, or CPUs), such as a processor 504. Processor 504 isconnected to a communication infrastructure or bus 506. Computer system500 also includes input/output device(s) 403, such as monitors,keyboards, pointing devices, etc., that communicate with communicationinfrastructure or bus 506 through input/output interface(s) 502. Acontrol tool can receive instructions to implement functions andoperations described herein—e.g., the functions of lithography apparatus100 described in FIG. 1 and the method/process described in FIGS. 2-4—via input/output device(s) 503. Computer system 500 also includes amain or primary memory 508, such as random access memory (RAM). Mainmemory 508 can include one or more levels of cache. Main memory 508 hasstored therein control logic (e.g., computer software) and/or data. Insome embodiments, the control logic (e.g., computer software) and/ordata can include one or more of the functions described above withrespect to lithography apparatus 100. In some embodiments, processor 504can be configured to execute the control logic stored in main memory508.

Computer system 500 can also include one or more secondary storagedevices or memory 510. Secondary memory 510 can include, for example, ahard disk drive 512 and/or a removable storage device or drive 514.Removable storage drive 514 can be a floppy disk drive, a magnetic tapedrive, a compact disk drive, an optical storage device, tape backupdevice, and/or any other storage device/drive.

Removable storage drive 514 can interact with a removable storage unit518. Removable storage unit 518 includes a computer usable or readablestorage device with computer software (control logic) and/or data storedthereon. Removable storage unit 518 can be a floppy disk, magnetic tape,compact disk, DVD, optical storage disk, and/any other computer datastorage device. Removable storage drive 514 reads from and/or writes toremovable storage unit 518 in a well-known manner.

According to some embodiments, secondary memory 510 can include othermechanisms, instrumentalities or other approaches for allowing computerprograms and/or other instructions and/or data to be accessed bycomputer system 500. Such mechanisms, instrumentalities or otherapproaches can include, for example, a removable storage unit 522 and aninterface 520. Examples of the removable storage unit 522 and theinterface 520 can include a program cartridge and cartridge interface(such as that found in video game devices), a removable memory chip(such as an EPROM or PROM) and associated socket, a memory stick and USBport, a memory card and associated memory card slot, and/or any otherremovable storage unit and associated interface. In some embodiments,secondary memory 510, removable storage unit 518, and/or removablestorage unit 522 can include one or more of the functions describedabove with respect to the wet bench structure.

Computer system 500 can further include a communication or networkinterface 524. Communication interface 524 enables computer system 500to communicate and interact with any combination of remote devices,remote networks, remote entities, etc. (individually and collectivelyreferenced by reference number 528). For example, communicationinterface 524 can allow computer system 500 to communicate with remotedevices 528 over communications path 526, which can be wired and/orwireless, and which can include any combination of LANs, WANs, theInternet, etc. Control logic and/or data can be transmitted to and fromcomputer system 500 via communication path 526.

The functions/operations in the preceding embodiments can be implementedin a wide variety of configurations and architectures. Therefore, someor all of the operations in the preceding embodiments—e.g., thefunctions of lithography apparatus 100 described in FIG. 1 and themethod/process described in FIGS. 2-4 —can be performed in hardware, insoftware or both. In some embodiments, a tangible apparatus or articleof manufacture including a tangible computer useable or readable mediumwith control logic (software) stored thereon is also referred to hereinas a computer program product or program storage device. This includes,but is not limited to, computer system 500, main memory 508, secondarymemory 510 and removable storage units 518 and 522, as well as tangiblearticles of manufacture embodying any combination of the foregoing. Suchcontrol logic, when executed by one or more data processing devices(such as computer system 500), causes such data processing devices tooperate as described herein. For example, the hardware/equipment can beconnected to or be part of element 528 (remote device(s), network(s),entity(ies) 528) of computer system 500.

In some embodiments, a semiconductor apparatus can include a chuckconfigured to hold a substrate, a first drain cup surrounding the chuck,and a detection module disposed in space between the first drain cup andthe chuck and configured to monitor sidewalls of the first drain cup.

In some embodiments, a method can include determining a contaminationcharacteristic of a lithography apparatus by measuring a visualsignature, an optical signature, an acoustic signature, a vacuumsignature, or a material usage signature associated with one or morecoating materials consumed by the lithography apparatus. The method canfurther include comparing the contamination characteristic to a baselinecleanliness requirement and triggering a decontamination process toremove the residue associated with the one or more coating materialsbased on the comparison.

In some embodiments, a method for operating a lithography apparatus caninclude conducting one or more coating processes in the lithographyapparatus, determining a contamination level associated with the one ormore coating processes, and adjusting one or more operations of thelithography apparatus to reduce the contamination level based on acomparison between the contamination level and a predefined threshold.

The foregoing disclosure outlines features of several embodiments sothat those skilled in the art may better understand the aspects of thepresent disclosure. Those skilled in the art should appreciate that theymay readily use the present disclosure as a basis for designing ormodifying other processes and structures for carrying out the samepurposes and/or achieving the same advantages of the embodimentsintroduced herein. Those skilled in the art should also realize thatsuch equivalent constructions do not depart from the spirit and scope ofthe present disclosure, and that they may make various changes,substitutions, and alterations herein without departing from the spiritand scope of the present disclosure.

What is claimed is:
 1. A semiconductor apparatus, comprising: a chuckconfigured to hold a substrate; a drain structure surrounding the chuck;an acoustic device configured to detect contamination adhering to thedrain structure by transmitting an acoustic signal towards the drainstructure and measuring a reflected or scattered acoustic signal fromthe drain structure; a detection device between the chuck and the drainstructure, wherein the detection device is configured to determine acontamination level of the contamination; and a controller configured totrigger a decontamination process based on a comparison between thecontamination level and a baseline cleanliness requirement of thesemiconductor apparatus.
 2. The semiconductor apparatus of claim 1,wherein the detection device is further configured to detect a thicknessor a surface coverage of the contamination.
 3. The semiconductorapparatus of claim 1, wherein the controller is further configured totrigger a decontamination process comprising dispensing a solvent to thedrain structure.
 4. The semiconductor apparatus of claim 3, wherein thecontroller is further configured to continue to dispense the solventuntil the contamination level meets the baseline cleanlinessrequirement.
 5. The semiconductor apparatus of claim 1, wherein thedetection device is further configured to monitor sidewalls of the drainstructure.
 6. The semiconductor apparatus of claim 1, wherein thecontroller is further configured to adjust one or more operations of thesemiconductor apparatus based on the comparison between thecontamination level and the baseline cleanliness requirement of thesemiconductor apparatus.
 7. The semiconductor apparatus of claim 1,wherein the controller is further configured to compare thecontamination level to the baseline cleanliness requirement, wherein thebaseline cleanliness requirement comprises a predefined upper limit of asurface coverage or thickness of the contamination adhering to sidewallsof the drain structure.
 8. The semiconductor apparatus of claim 7,wherein the controller is further configured to subtract a surfacecoverage or thickness of the contamination level from a predefined upperlimit of the contamination level.
 9. A detection device, comprising: anoptical device configured to detect a contamination level of acontaminant adhering to a drain structure based on a reflected orscattered optical signal from the drain structure; and a controllerconfigured to trigger a decontamination process based on a comparisonbetween the contamination level and a baseline cleanliness requirement.10. The detection device of claim 9, wherein the optical device isfurther configured to collect a visual signature of an inner surface ofthe drain structure.
 11. The detection device of claim 9, wherein theoptical device is further configured to collect a visual signaturecomprising information about color saturation, color gradation, contrastor brightness associated with the contamination level.
 12. The detectiondevice of claim 9, wherein the controller is further configured toperform a pixel subtraction between a collected image and a predefinedimage of the drain structure.
 13. The detection device of claim 9,wherein the controller is further configured to compare thecontamination level to the baseline cleanliness requirement, wherein thebaseline cleanliness requirement comprises a predefined visual signatureof the drain structure.
 14. The detection device of claim 9, wherein theoptical device is further configured to determine the contaminationlevel by calculating an intensity and a phase difference between anemitted optical signal and the scattered or reflected optical signal.15. A method, comprising: determining a contamination level within adrain structure of a semiconductor apparatus; comparing thecontamination level to a baseline level of cleanliness of thesemiconductor apparatus to produce a comparison result; and performing adecontamination process of the drain structure based on the comparisonresult.
 16. The method of claim 15, wherein performing thedecontamination process comprises dispensing a solvent into the drainstructure.
 17. The method of claim 16, wherein dispensing the solventcomprises dispensing the solvent until the contamination level meets thebaseline cleanliness requirement.
 18. The method of claim 16, furthercomprising setting a new contamination level to a fraction of thecontamination level in response to removal of contaminants by thesolvent.
 19. The method of claim 15, further comprising setting a newcontamination level to zero in response to removal of contaminants fromthe drain structure.
 20. The method of claim 15, further comprisingtriggering a preventive maintenance alert for the semiconductorapparatus in response to the contamination level being above thebaseline level of cleanliness.